Part Image

NVMFS6H852NLWFT1G - onsemi

Description: Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; NVMFS6H852NLWFT1G− Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

Download NVMFS6H852NLWFT1G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NVMFS6H852NLWFT1G - onsemi PCB footprint - Other - Other - NVMFS6H852NLWFT1G-2
click to zoom
3D Models
NVMFS6H852NLWFT1G - onsemi  - 3D model - Other - NVMFS6H852NLWFT1G-2
click to zoom

NVMFS6H852NLWFT1G Details

  • Manufacturer Part Number:

    NVMFS6H852NLWFT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW5 4.90x5.90x1.00, 1.27P

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    507BA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    207 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    42 A

  • Drain-source On Resistance-Max:

    0.017 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    6 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    54 W

  • Pulsed Drain Current-Max (IDM):

    208 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS6H852NLWFT1G Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for NVMFS6H852NLWFT1G is -40°C to 125°C.
  • To ensure data integrity during power cycling, it is recommended to use a voltage supervisor or a power-on reset circuit to ensure that the device is properly initialized before accessing the flash memory.
  • The maximum number of erase cycles for NVMFS6H852NLWFT1G is 100,000 cycles.
  • In case of a page erase error, it is recommended to retry the erase operation up to 3 times. If the error persists, the device should be reset and the erase operation retried.
  • The recommended method for programming the device is to use a programming algorithm that follows the device's programming protocol, such as the one provided in the datasheet.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NVMFS6H852NLWFT1G Overview

Use the download button to access the NVMFS6H852NLWFT1G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like NVMFS, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NVMFS6H852NLWFT1G

Showing 0 results