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NVMFS6H852NT1G - onsemi

Description: Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; NVMFS6H852NWF − Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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PCB Footprints
NVMFS6H852NT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P  (SO−8FL) CASE 488AA ISSUE N
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3D Models
NVMFS6H852NT1G - onsemi  - 3D model - Other - DFN5 5x6, 1.27P  (SO−8FL) CASE 488AA ISSUE N
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NVMFS6H852NT1G Details

  • Manufacturer Part Number:

    NVMFS6H852NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2018-08-02

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    184 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.0142 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5.4 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    54 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS6H852NT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the package is recommended. This helps to dissipate heat efficiently and reduce thermal resistance.
  • Ensure that the device is operated within the recommended voltage and current limits, and that the PCB is designed to minimize thermal gradients. Also, consider using a thermal interface material (TIM) to improve heat transfer between the device and heat sink.
  • Exceeding the maximum Tj rating can lead to reduced device lifespan, increased leakage current, and potentially even device failure. It is essential to ensure that the device operates within the recommended temperature range to maintain reliability and performance.
  • Implement ESD protection measures such as using ESD-sensitive handling procedures, using ESD-protective packaging, and incorporating ESD-protection devices (e.g., TVS diodes) in the circuit design.
  • When paralleling multiple devices, ensure that each device has its own decoupling capacitor and that the PCB layout is designed to minimize inductive coupling between devices. Also, consider using a common gate driver or controller to ensure synchronized switching.

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NVMFS6H852NT1G Overview

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