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NVMFS6H852NWFT1G - onsemi

Description: Power MOSFET 80V, 43A, 14.2 mOhm, Single N-Channel, SO8-FL.

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NVMFS6H852NWFT1G Details

  • Manufacturer Part Number:

    NVMFS6H852NWFT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW5 4.90x5.90x1.00, 1.27P

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    507BA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Date Of Intro:

    2018-08-02

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    184 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.0142 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5.4 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    54 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS6H852NWFT1G Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for NVMFS6H852NWFT1G is -40°C to 125°C, as specified in the datasheet. However, it's essential to note that the device can tolerate a wider temperature range during storage, typically from -55°C to 150°C.
  • To ensure reliable data retention in NVMFS6H852NWFT1G, it's crucial to follow the recommended usage and storage guidelines. This includes avoiding exposure to extreme temperatures, humidity, and radiation. Additionally, ensure that the device is powered down correctly during storage, and avoid applying voltage to the device during storage.
  • The maximum number of program/erase cycles for NVMFS6H852NWFT1G is 100,000 cycles, as specified in the datasheet. However, it's essential to note that the actual number of cycles may vary depending on the usage and operating conditions.
  • In case of errors during programming or erasing NVMFS6H852NWFT1G, it's recommended to follow the error handling procedures outlined in the datasheet. This may include retrying the operation, checking the device status, and performing a soft reset if necessary.
  • The recommended power-up sequence for NVMFS6H852NWFT1G is to apply VCC first, followed by VPP, and then the clock signal. This ensures that the device powers up correctly and minimizes the risk of latch-up or other issues.

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NVMFS6H852NWFT1G Overview

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