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NVMFS6H864NLT1G - onsemi

Description: Small Footprint (5x6mm); Low RDS (on); Low QG and Capacitance; NVMFS6H864NLWF -Wettable Flank Option; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant

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NVMFS6H864NLT1G - onsemi PCB footprint - Other - Other - DFN5 5x6 , 1.27P (SO−8FL) CASE 488AA ISSUE N_24
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NVMFS6H864NLT1G - onsemi  - 3D model - Other - DFN5 5x6 , 1.27P (SO−8FL) CASE 488AA ISSUE N_24
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NVMFS6H864NLT1G Details

  • Manufacturer Part Number:

    NVMFS6H864NLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5,8 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    68 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    33 A

  • Drain-source On Resistance-Max:

    0.038 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    4 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    33 W

  • Pulsed Drain Current-Max (IDM):

    97 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS6H864NLT1G Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for NVMFS6H864NLT1G is 2.7V to 3.6V.
  • To ensure data integrity during power-down or power-up sequences, it is recommended to follow the power-down and power-up sequencing guidelines provided in the datasheet, and to use a voltage supervisor or a power-on reset circuit to ensure that the device is properly initialized.
  • The maximum operating frequency for NVMFS6H864NLT1G is 108 MHz.
  • In case of errors during write or erase operations, the device provides error flags and status registers that can be used to detect and handle errors. It is recommended to implement error handling mechanisms in the firmware to handle such errors and ensure data integrity.
  • The endurance rating of NVMFS6H864NLT1G is 100,000 program/erase cycles.

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