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NVMFWS0D5N04XMT1G - onsemi

Description: Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVMFWS0D5N04XMT1G - onsemi PCB footprint - Other - Other - DFNW5 5x6, FULL−CUT SO8FL WF CASE 507BD  ISSUE O
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NVMFWS0D5N04XMT1G - onsemi  - 3D model - Other - DFNW5 5x6, FULL−CUT SO8FL WF CASE 507BD  ISSUE O
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NVMFWS0D5N04XMT1G Details

  • Manufacturer Part Number:

    NVMFWS0D5N04XMT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW5 5x6, FULL−CUT SO8FL WF

  • Manufacturer Package Code:

    507BD

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    1434 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    423 A

  • Drain-source On Resistance-Max:

    0.00052 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    150 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    163 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

NVMFWS0D5N04XMT1G Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for NVMFWS0D5N04XMT1G is -40°C to 125°C.
  • The power-up sequence for NVMFWS0D5N04XMT1G should follow the recommended sequence in the datasheet: VCC, then VPP, and finally CLK. This ensures proper device initialization and prevents latch-up.
  • The maximum allowed voltage on the VPP pin is 10.5V. Exceeding this voltage may cause permanent damage to the device.
  • A reliable write protection mechanism can be implemented by using the WP pin, which is an active-low input. When WP is low, the device is in write-protect mode, and any write operations are inhibited.
  • The RDY/BUSY pin is an open-drain output that indicates the device's busy status during programming or erase operations. It can be used to implement a wait-state mechanism in the system, ensuring that the device is not accessed during these operations.

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NVMFWS0D5N04XMT1G Overview

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