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NVMFWS0D9N04XMT1G - onsemi

Description: Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVMFWS0D9N04XMT1G - onsemi PCB footprint - Other - Other - DFNW5 5x6  FULL−CUT SO8FL WF) CASE 507BA ISSUE A
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NVMFWS0D9N04XMT1G - onsemi  - 3D model - Other - DFNW5 5x6  FULL−CUT SO8FL WF) CASE 507BA ISSUE A
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NVMFWS0D9N04XMT1G Details

  • Manufacturer Part Number:

    NVMFWS0D9N04XMT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW5 4.90x5.90x1.00, 1.27P

  • Package Description:

    SO-8FL, DFNW5, 6 PIN

  • Manufacturer Package Code:

    507BA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    390 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    48 A

  • Drain-source On Resistance-Max:

    0.0009 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    35 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    121 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVMFWS0D9N04XMT1G Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for NVMFWS0D9N04XMT1G is -40°C to 125°C.
  • To ensure reliable data retention, it is recommended to follow the datasheet guidelines for programming, erasing, and reading data, and to avoid exposing the device to extreme temperatures, voltage, or radiation.
  • Yes, NVMFWS0D9N04XMT1G is designed for high-reliability applications, such as automotive, industrial, and aerospace, due to its robust architecture, error correction, and high-temperature operation.
  • The POR and BOR features are designed to ensure the device resets correctly during power-up and power-down events. Follow the datasheet guidelines for proper implementation and ensure that the device is powered up and down within the specified voltage and timing requirements.
  • The recommended method for programming and erasing the device is to use the onsemi-provided programming software and follow the datasheet guidelines for programming and erasing procedures.

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NVMFWS0D9N04XMT1G Overview

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