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NVMFWS1D1N04XMT1G - onsemi

Description: Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVMFWS1D1N04XMT1G - onsemi PCB footprint - Other - Other - DFNW5 5x6  FULL−CUT SO8FL WF) CASE 507BA ISSUE A
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NVMFWS1D1N04XMT1G - onsemi  - 3D model - Other - DFNW5 5x6  FULL−CUT SO8FL WF) CASE 507BA ISSUE A
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NVMFWS1D1N04XMT1G Details

  • Manufacturer Part Number:

    NVMFWS1D1N04XMT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW5 4.90x5.90x1.00, 1.27P

  • Manufacturer Package Code:

    507BA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    395 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    44 A

  • Drain-source On Resistance-Max:

    0.00105 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    29.4 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVMFWS1D1N04XMT1G Frequently Asked Questions (FAQs)

  • The recommended PCB layout involves placing the device near the antenna, using a solid ground plane, and minimizing trace lengths. For thermal management, ensure good airflow, use a heat sink if necessary, and follow the recommended thermal pad layout.
  • Use a combination of TVS diodes, ESD protection ICs, and PCB design techniques such as guard rings and ESD protection zones to ensure the device is protected from electrostatic discharge.
  • The antenna design should be optimized for the operating frequency, and the antenna impedance should be matched to the device's input impedance. Use simulation tools and measurement techniques to ensure optimal antenna performance.
  • Follow the guidelines and regulations for the target region, ensure the device is designed and tested to meet the required specifications, and obtain certification from a recognized testing laboratory.
  • Use a vector network analyzer (VNA) to measure the device's S-parameters, and a spectrum analyzer to measure the output power and frequency. Follow the recommended test setup and calibration procedures to ensure accurate results.

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NVMFWS1D1N04XMT1G Overview

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