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NVMFWS2D3N04XMT1G - onsemi

Description: Low QG and Capacitance; Small Footprint (5x6 mm); Low RDS(on); Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVMFWS2D3N04XMT1G - onsemi PCB footprint - Other - Other - DFNW5 5x6  FULL−CUT SO8FL WF) CASE 507BA ISSUE A
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NVMFWS2D3N04XMT1G - onsemi  - 3D model - Other - DFNW5 5x6  FULL−CUT SO8FL WF) CASE 507BA ISSUE A
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NVMFWS2D3N04XMT1G Details

  • Manufacturer Part Number:

    NVMFWS2D3N04XMT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW5 4.90x5.90x1.00, 1.27P

  • Package Description:

    SO-8FL, DFNW5, 6 PIN

  • Manufacturer Package Code:

    507BA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    155 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    121 A

  • Drain-source On Resistance-Max:

    0.00235 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15.5 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    63 W

  • Pulsed Drain Current-Max (IDM):

    688 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVMFWS2D3N04XMT1G Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for NVMFWS2D3N04XMT1G is -40°C to 125°C.
  • To ensure reliable data retention, it is recommended to follow the datasheet guidelines for programming, erasing, and reading data, and to avoid exposing the device to extreme temperatures, voltage, or radiation.
  • Yes, NVMFWS2D3N04XMT1G is designed for high-reliability applications, such as automotive, industrial, and aerospace, due to its high endurance, low power consumption, and robust error correction capabilities.
  • The datasheet provides guidelines for error detection and correction mechanisms, such as ECC, CRC, and retry mechanisms. It is recommended to implement these mechanisms in your design to handle errors and exceptions.
  • The typical programming time for NVMFWS2D3N04XMT1G is around 2-3 ms per page, depending on the operating frequency and voltage.

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NVMFWS2D3N04XMT1G Overview

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