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NVMFWS2D3P04M8LT1G - onsemi

Description: Low RDS (on) ; High Current Capability; Avalanche Energy Specified; NVMFWS2D3P04M8LT1G − Wettable Flanks Product; NVM Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; EC−Q101Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHSCompliant

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NVMFWS2D3P04M8LT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 506EZ ISSUE A
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NVMFWS2D3P04M8LT1G - onsemi  - 3D model - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 506EZ ISSUE A
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NVMFWS2D3P04M8LT1G Details

  • Manufacturer Part Number:

    NVMFWS2D3P04M8LT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW5 4.90x5.90x1.00, 1.27P

  • Manufacturer Package Code:

    507BA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    32 A

  • Drain-source On Resistance-Max:

    0.003 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    185 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFWS2D3P04M8LT1G Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for NVMFWS2D3P04M8LT1G is -40°C to 125°C.
  • To ensure reliable data retention, it is recommended to follow the recommended erase and program cycles, and to avoid exposing the device to extreme temperatures or voltage fluctuations.
  • The NVMFWS2D3P04M8LT1G supports up to 100,000 erase cycles.
  • Yes, the NVMFWS2D3P04M8LT1G is designed for high-reliability applications and meets the requirements for automotive and industrial-grade devices.
  • The NVMFWS2D3P04M8LT1G uses a standard SPI interface, and can be interfaced with a microcontroller or other devices using the SPI protocol.

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NVMFWS2D3P04M8LT1G Overview

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