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NVMFWS3D6N10MCLT1G - onsemi

Description: N-Channel 100 V 20A (Ta), 132A (Tc) 3.2W (Ta), 139W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

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NVMFWS3D6N10MCLT1G - onsemi - PCB symbol
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PCB Footprints
NVMFWS3D6N10MCLT1G - onsemi PCB footprint - Other - Other - DFNW5 4.90x5.90x1.00, 1.27P CASE 507BA ISSUE C
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NVMFWS3D6N10MCLT1G - onsemi - 3D model - Other - DFNW5 4.90x5.90x1.00, 1.27P CASE 507BA ISSUE C
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NVMFWS3D6N10MCLT1G Details

  • Manufacturer Part Number:

    NVMFWS3D6N10MCLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW5 4.90x5.90x1.00, 1.27P

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    507BA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    739 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    132 A

  • Drain-source On Resistance-Max:

    0.0036 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    139 W

  • Pulsed Drain Current-Max (IDM):

    888 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFWS3D6N10MCLT1G Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended for optimal thermal performance. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • To ensure reliable data retention in extreme temperatures, it is recommended to follow the recommended operating conditions and storage guidelines outlined in the datasheet. Additionally, using error correction codes and implementing data redundancy can help mitigate data loss due to temperature fluctuations.
  • Using a lower voltage supply than the recommended 3.3V may result in reduced performance, increased access times, and potential data loss. It is not recommended to operate the device below the minimum recommended voltage to ensure reliable operation.
  • The NVMFSW3D6N10MCLT1G is not designed to operate in radiation-intensive environments. If your application requires radiation-hardened devices, you should consider using a different component specifically designed for such environments.
  • The recommended method for erasing the device is to use the chip erase command (60h) followed by a sector erase command (D8h) for each sector to be erased. Refer to the datasheet for detailed erase procedures.

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NVMFWS3D6N10MCLT1G Overview

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