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NVMJS1D5N04CLTWG - onsemi

Description: Small Footprint (5x6mm); Low RDS (ON); Low QG and Capacitance; LFPAK8 Package, Industry Standard; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant

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PCB Footprints
NVMJS1D5N04CLTWG - onsemi PCB footprint - Other - Other - LFPAK8 4.90x4.80x1.12MM, 1.27P CASE 760AA ISSUE D
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3D Models
NVMJS1D5N04CLTWG - onsemi  - 3D model - Other - LFPAK8 4.90x4.80x1.12MM, 1.27P CASE 760AA ISSUE D
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NVMJS1D5N04CLTWG Details

  • Manufacturer Part Number:

    NVMJS1D5N04CLTWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    LFPAK-8

  • Manufacturer Package Code:

    760AA

  • Country Of Origin:

    Mainland China, Malaysia, Philippines, Thailand, Vietnam

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    493 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    200 A

  • Drain-source On Resistance-Max:

    0.0022 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    72 pF

  • JESD-30 Code:

    R-PDSO-X5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    110 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMJS1D5N04CLTWG Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance would involve placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the device.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, use a suitable thermal management system, and consider derating the device's power dissipation. Additionally, ensure that the device is properly soldered and the PCB is designed to minimize thermal resistance.
  • To prevent ESD damage, it's recommended to follow standard ESD handling procedures, use ESD-protective packaging, and implement ESD protection circuits on the PCB. The device itself has built-in ESD protection, but additional protection measures can provide extra safety.
  • Yes, the NVMJS1D5N04CLTWG is qualified for automotive and high-reliability applications. However, it's essential to follow the recommended operating conditions, and ensure that the device is properly soldered and the PCB is designed to meet the required reliability standards.
  • To prevent damage, it's recommended to store the devices in their original packaging, away from direct sunlight, moisture, and extreme temperatures. Handle the devices by the body, avoiding touching the pins, and use anti-static wrist straps or mats when handling the devices.

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NVMJS1D5N04CLTWG Overview

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