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NVMJS1D6N06CLTWG - onsemi

Description: Small Footprint (5x6mm); Low RDS (ON); Low QG and Capacitance; LFPAK8 Package; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant

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NVMJS1D6N06CLTWG - onsemi PCB footprint - Other - Other - LFPAK8 4.90x4.80x1.12MM, 1.27P CASE 760AA ISSUE D
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NVMJS1D6N06CLTWG - onsemi  - 3D model - Other - LFPAK8 4.90x4.80x1.12MM, 1.27P CASE 760AA ISSUE D
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NVMJS1D6N06CLTWG Details

  • Manufacturer Part Number:

    NVMJS1D6N06CLTWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    LFPAK-8

  • Manufacturer Package Code:

    760AA

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2018-12-27

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    451 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    250 A

  • Drain-source On Resistance-Max:

    0.0023 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    45 pF

  • JESD-30 Code:

    R-PDSO-X5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    167 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMJS1D6N06CLTWG Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves placing a thermal pad on the bottom of the package, using a minimum of 2oz copper thickness, and ensuring good thermal conduction to the surrounding copper area. A thermal via array can also be used to improve heat dissipation.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, including the maximum junction temperature (Tj) of 150°C. Additionally, consider using a heat sink, thermal interface material, and ensuring good airflow around the device.
  • The NVMJS1D6N06CLTWG has built-in ESD protection, but it's still important to follow standard ESD handling precautions, such as using an ESD wrist strap, mat, or workstation, and avoiding direct contact with the device pins.
  • Yes, the NVMJS1D6N06CLTWG is qualified for automotive and high-reliability applications, meeting the requirements of AEC-Q101 and other relevant standards. However, it's essential to consult with onsemi's application engineers to ensure the device meets the specific requirements of your application.
  • The recommended gate drive circuits and layout considerations involve using a low-impedance gate drive circuit, minimizing the gate resistance and inductance, and ensuring a low-voltage drop across the gate resistor. A dedicated gate drive IC or a discrete gate driver circuit can be used, and the layout should be designed to minimize parasitic inductance and capacitance.

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