Description:Small Footprint (5x6mm); Low RDS (ON); Low QG and Capacitance; LFPAK8 Package; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant
Mainland China, Malaysia, Philippines, Thailand, Vietnam
ECCN Code:
EAR99
Factory Lead Time:
14 Weeks
Manufacturer:
onsemi
YTEOL:
3
Avalanche Energy Rating (Eas):
430 mJ
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
60 V
Drain Current-Max (ID):
139.3 A
Drain-source On Resistance-Max:
0.0029 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
21 pF
JESD-30 Code:
R-PDSO-X8
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
8
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
175 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
112.5 W
Pulsed Drain Current-Max (IDM):
900 A
Reference Standard:
AEC-Q101
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn) - annealed
Terminal Form:
UNSPECIFIED
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
30
Transistor Element Material:
SILICON
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NVMJS3D0N06CTWG Overview
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