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NVMJST1D6N04CTXG - onsemi

Description: Single N-Channel Power MOSFET 40V, 319A, 1.65 mΩ on top Cool Package

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NVMJST1D6N04CTXG Details

  • Manufacturer Part Number:

    NVMJST1D6N04CTXG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TCPAK10 5.1x7.5, 1.0P

  • Manufacturer Package Code:

    760AG

  • Country Of Origin:

    Mainland China, Malaysia, Philippines, Thailand, Vietnam

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    338 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    314 A

  • Drain-source On Resistance-Max:

    0.00165 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    45 pF

  • JESD-30 Code:

    R-PDSO-G10

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    10

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMJST1D6N04CTXG Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance would involve placing thermal vias under the package, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the package.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, use a suitable thermal management system, and consider derating the device's power dissipation. Additionally, ensure that the device is properly soldered and the PCB is designed to minimize thermal resistance.
  • Exceeding the maximum junction temperature (Tj) rating can lead to reduced device lifespan, increased leakage current, and potentially even device failure. It's crucial to ensure that the device operates within the recommended temperature range to maintain reliability and performance.
  • To handle ESD protection for the NVMJST1D6N04CTXG, it's recommended to follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits or devices in the system design. Additionally, ensure that the device is properly grounded during handling and assembly.
  • The recommended storage conditions for the NVMJST1D6N04CTXG include storing the devices in their original packaging, in a dry, cool place, away from direct sunlight and moisture. The storage temperature should be between -40°C and 125°C, and the relative humidity should be below 60%.

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NVMJST1D6N04CTXG Overview

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