NVMJST2D6N08HTXG - onsemi

NVMJST2D6N08HTXG Details

• Manufacturer Part Number:

  NVMJST2D6N08HTXG

• Brand Name:

  onsemi

• Pbfree Code:

  Yes

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Part Package Code:

  TCPAK10 5.1x7.5, 1.0P

• Manufacturer Package Code:

  760AG

• Country Of Origin:

  Mainland China, Malaysia, Philippines, Thailand, Vietnam

• ECCN Code:

  EAR99

• Factory Lead Time:

  17 Weeks

• Manufacturer:

  onsemi

• YTEOL:

  6

• Avalanche Energy Rating (Eas):

  757 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  80 V

• Drain Current-Max (ID):

  131.5 A

• Drain-source On Resistance-Max:

  0.0028 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  25 pF

• JESD-30 Code:

  R-PDSO-G10

• JESD-609 Code:

  e4

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  10

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  175 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  260

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  116 W

• Pulsed Drain Current-Max (IDM):

  900 A

• Reference Standard:

  AEC-Q101

• Surface Mount:

  YES

• Terminal Finish:

  Nickel/Palladium/Gold (Ni/Pd/Au)

• Terminal Form:

  GULL WING

• Terminal Position:

  DUAL

• Time@Peak Reflow Temperature-Max (s):

  30

• Transistor Element Material:

  SILICON