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NVMTS001N06CTXG - onsemi

Description: Small Footprint (8x8 mm); Low RDS(on); Low QG and Capacitance; Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVMTS001N06CTXG - onsemi  - 3D model
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NVMTS001N06CTXG Details

  • Manufacturer Part Number:

    NVMTS001N06CTXG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW-8

  • Package Description:

    DFNW-8

  • Manufacturer Package Code:

    507AP

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2019-02-01

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    887 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    376 A

  • Drain-source On Resistance-Max:

    0.00091 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    107 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    244 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVMTS001N06CTXG Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a thermal pad on the bottom of the device, connected to a large copper area on the PCB. This helps to dissipate heat efficiently. Additionally, it's recommended to use a 2-ounce copper layer and to avoid routing high-current traces under the device.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions and derating guidelines provided in the datasheet. Additionally, consider using a heat sink or thermal interface material to reduce the junction temperature. It's also important to ensure good airflow and to avoid overheating the device.
  • The NVMTS001N06CTXG has an integrated ESD protection diode, but it's still recommended to follow proper ESD handling procedures during assembly and testing. It's also important to ensure that the PCB design includes adequate ESD protection measures, such as ESD diodes or resistors, to prevent damage to the device.
  • Yes, the NVMTS001N06CTXG is suitable for high-reliability and automotive applications. It's AEC-Q101 qualified and meets the requirements for automotive-grade devices. However, it's essential to follow the recommended operating conditions and to ensure that the device is used within its specified ratings.
  • The gate resistor value depends on the specific application and the required switching frequency. A general guideline is to use a gate resistor value between 10 ohms and 100 ohms. However, it's recommended to consult the application note or to perform simulations to determine the optimal gate resistor value for the specific design.

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NVMTS001N06CTXG Overview

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