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NVMTS0D6N04CTXG - onsemi

Description: Power MOSFET 40 V, 0.48 m, 533 A, Single N−Channel

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NVMTS0D6N04CTXG Details

  • Manufacturer Part Number:

    NVMTS0D6N04CTXG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW-8

  • Package Description:

    TDFNW-8

  • Manufacturer Package Code:

    507AP

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Date Of Intro:

    2019-01-08

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    2058 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    533 A

  • Drain-source On Resistance-Max:

    0.00048 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    199 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    245 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVMTS0D6N04CTXG Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended for optimal thermal performance. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended temperature range (−40°C to 150°C). Use a heat sink or thermal pad to dissipate heat, and consider using a thermal interface material to improve heat transfer.
  • The recommended soldering conditions are: peak temperature 260°C, time above 217°C 30 seconds, and time above 183°C 60 seconds. Use a solder with a melting point above 217°C.
  • Store the device in a dry, cool place away from direct sunlight. Use anti-static packaging and handling procedures to prevent electrostatic discharge damage.
  • The NVMTS0D6N04CTXG meets the quality and reliability standards of onsemi, including AEC-Q101 and ISO/TS 16949. The device is also RoHS and REACH compliant.

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NVMTS0D6N04CTXG Overview

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