Part Image

NVMTS1D6N10MCTXG - onsemi

Description: MOSFET - Power, Single N-Channel, 100 V, 1.7 m, 273 A

Download NVMTS1D6N10MCTXG Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NVMTS1D6N10MCTXG - onsemi PCB footprint - Other - Other - TDFNW8 8.30x8.40x1.10, 2.00P CASE 507AP ISSUE E
click to zoom
3D Models
NVMTS1D6N10MCTXG - onsemi  - 3D model - Other - TDFNW8 8.30x8.40x1.10, 2.00P CASE 507AP ISSUE E
click to zoom

NVMTS1D6N10MCTXG Details

  • Manufacturer Part Number:

    NVMTS1D6N10MCTXG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW-8

  • Manufacturer Package Code:

    507AP

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    258 A

  • Drain-source On Resistance-Max:

    0.0016 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    75 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    214 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMTS1D6N10MCTXG Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using thermal vias to dissipate heat. A 4-layer PCB with a dedicated thermal layer is also recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, use a suitable thermal design, and consider derating the device's power dissipation. Additionally, ensure that the device is properly soldered and that the PCB is designed to minimize thermal resistance.
  • The NVMTS1D6N10MCTXG has built-in ESD protection, but it's still important to follow proper ESD handling procedures during assembly and testing. A human body model (HBM) of ±2 kV and a charged device model (CDM) of ±1 kV are recommended.
  • Yes, the NVMTS1D6N10MCTXG is suitable for high-reliability and automotive applications. It's AEC-Q101 qualified and meets the requirements for automotive-grade devices. However, it's essential to follow the recommended operating conditions and ensure that the device is properly validated for the specific application.
  • The optimal gate resistor value depends on the specific application, including the switching frequency, voltage, and current. A general guideline is to use a gate resistor value between 10 Ω and 100 Ω. However, it's recommended to consult the application note or seek guidance from onsemi's technical support team for a more accurate calculation.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NVMTS1D6N10MCTXG Overview

Use the download button to access the NVMTS1D6N10MCTXG schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like NVMTS, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NVMTS1D6N10MCTXG

Showing 0 results