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NVMTSC1D3N08M7TXG - onsemi

Description: Small Footprint (8x8 mm); Low RDS(on); Low QG and Capacitance; Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVMTSC1D3N08M7TXG - onsemi PCB footprint - Other - Other - NVMTSC1D3N08M7TXG-2
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NVMTSC1D3N08M7TXG - onsemi  - 3D model - Other - NVMTSC1D3N08M7TXG-2
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NVMTSC1D3N08M7TXG Details

  • Manufacturer Part Number:

    NVMTSC1D3N08M7TXG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW-8

  • Package Description:

    DFNW-8

  • Manufacturer Package Code:

    507AR

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Date Of Intro:

    2020-01-28

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    2228 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    348 A

  • Drain-source On Resistance-Max:

    0.00125 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    106 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    287 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVMTSC1D3N08M7TXG Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper thermal management, use a heat sink or thermal pad, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The maximum allowed voltage on the gate pin is 20V, but it's recommended to keep it below 15V to ensure reliable operation and prevent damage to the device.
  • Yes, the NVMTSC1D3N08M7TXG is suitable for high-frequency switching applications up to 1 MHz. However, ensure proper PCB layout, decoupling, and snubber circuits to minimize ringing and EMI.
  • Use a TVS diode or a zener diode to clamp overvoltages, and consider adding a current sense resistor and a fuse or a PTC resettable fuse to protect against overcurrent.

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Manufacturer Collaborated
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NVMTSC1D3N08M7TXG Overview

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