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NVMYS006N08LHTWG - onsemi

Description: MOSFET - Power, Single N-Channel, 80 V, 6.2 mΩ, 77 A

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NVMYS006N08LHTWG Details

  • Manufacturer Part Number:

    NVMYS006N08LHTWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    LFPAK-4

  • Manufacturer Package Code:

    760AB

  • Country Of Origin:

    Mainland China, Malaysia, Philippines, Thailand, Vietnam

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Date Of Intro:

    2020-02-11

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    653 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    77 A

  • Drain-source On Resistance-Max:

    0.0078 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    89 W

  • Pulsed Drain Current-Max (IDM):

    449 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVMYS006N08LHTWG Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance would involve placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the device and to connect it to a thermal plane or a heat sink.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including the maximum junction temperature (Tj) of 150°C. Additionally, consider using a heat sink, thermal interface material, and a robust PCB design to minimize thermal resistance. It's also crucial to monitor the device's temperature and adjust the operating conditions accordingly.
  • The NVMYS006N08LHTWG has built-in ESD protection, but it's still important to follow proper handling and storage precautions to prevent damage. This includes using an anti-static wrist strap, anti-static bags, and a grounded work surface. It's also recommended to avoid touching the device's pins or exposed pads, and to use a soldering iron with an anti-static tip.
  • Yes, the NVMYS006N08LHTWG is suitable for high-reliability and automotive applications. It's AEC-Q101 qualified, which means it meets the stringent requirements for automotive applications. However, it's essential to follow the recommended operating conditions, and to perform thorough testing and validation to ensure the device meets the specific requirements of your application.
  • To troubleshoot issues with the NVMYS006N08LHTWG, start by reviewing the datasheet and application notes to ensure correct usage and configuration. Check the device's operating conditions, including voltage, current, and temperature. Use oscilloscopes and logic analyzers to monitor the device's signals and behavior. If the issue persists, contact onsemi's technical support for further assistance and guidance.

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NVMYS006N08LHTWG Overview

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