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NVMYS010N04CLTWG - onsemi

Description: Small Footprint (5x6mm); Low RDS (ON); Low QG) and Capacitance; LFPAK4 Package, Industry Standard; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant

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NVMYS010N04CLTWG Details

  • Manufacturer Part Number:

    NVMYS010N04CLTWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    LFPAK-4

  • Manufacturer Package Code:

    760AB

  • Country Of Origin:

    Mainland China, Malaysia, Philippines, Thailand, Vietnam

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    62 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.0176 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    28 W

  • Pulsed Drain Current-Max (IDM):

    187 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMYS010N04CLTWG Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves placing thermal vias under the device, using a solid ground plane, and keeping the thermal traces as short and wide as possible. A 4-layer PCB with a dedicated thermal layer is also recommended.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended thermal design guidelines, use a suitable thermal interface material, and ensure good airflow around the device. Additionally, consider using a heat sink or a thermally enhanced package.
  • Exceeding the maximum junction temperature (Tj) rating can lead to reduced device lifespan, increased thermal resistance, and potentially even device failure. It's crucial to ensure that the device operates within the specified Tj rating to maintain reliability and performance.
  • To handle ESD protection during handling and assembly, follow proper ESD handling procedures, use ESD-safe materials and tools, and ensure that the device is properly grounded during assembly. Additionally, consider using ESD protection devices or circuits in the system design.
  • The recommended soldering conditions for this device involve using a soldering temperature of 260°C (max) for a maximum of 10 seconds, with a peak temperature of 240°C (max) for a maximum of 5 seconds. It's essential to follow the recommended soldering profile to prevent damage to the device.

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NVMYS010N04CLTWG Overview

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