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NVMYS1D3N04CTWG - onsemi

Description: Small Footprint; Low RDS (ON); Low QG and Capacitance; LFPAK4 Package, Industry Standard; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant

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NVMYS1D3N04CTWG - onsemi PCB footprint - Other - Other - NVMYS1D3N04CTWG-2
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NVMYS1D3N04CTWG Details

  • Manufacturer Part Number:

    NVMYS1D3N04CTWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    LFPAK-4

  • Package Description:

    LFPAK-4

  • Manufacturer Package Code:

    760AB

  • Country Of Origin:

    Mainland China, Malaysia, Philippines, Thailand, Vietnam

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    1621 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    252 A

  • Drain-source On Resistance-Max:

    0.00115 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    134 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMYS1D3N04CTWG Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended. Additionally, vias should be placed under the thermal pad to connect to the copper area.
  • Ensure that the device is operated within the recommended voltage and current ratings. Also, consider the thermal derating of the device, and ensure that the junction temperature (Tj) does not exceed 150°C. Proper PCB design, thermal management, and cooling mechanisms can help achieve this.
  • The NVMYS1D3N04CTWG has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. A minimum of 2kV HBM (Human Body Model) and 100V MM (Machine Model) ESD protection is recommended.
  • Yes, the NVMYS1D3N04CTWG is qualified for automotive and high-reliability applications. It meets the AEC-Q101 qualification standard, which ensures the device can operate reliably in harsh environments.
  • The recommended soldering conditions are: peak temperature 260°C, time above 217°C 30s, and time above 183°C 60s. It's also recommended to use a soldering iron with a temperature control system to prevent overheating.

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NVMYS1D3N04CTWG Overview

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