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NVMYS2D2N06CLTWG - onsemi

Description: Small Footprint (5x6 mm); Low RDS (ON); Low QG and Capacitance; LFPAK4 Package, Industry Standard; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant

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NVMYS2D2N06CLTWG - onsemi PCB footprint - Other - Other - LFPAK4 5x6 CASE 760AB ISSUE C
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NVMYS2D2N06CLTWG - onsemi  - 3D model - Other - LFPAK4 5x6 CASE 760AB ISSUE C
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NVMYS2D2N06CLTWG Details

  • Manufacturer Part Number:

    NVMYS2D2N06CLTWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    LFPAK-4

  • Manufacturer Package Code:

    760AB

  • Country Of Origin:

    Mainland China, Malaysia, Philippines, Thailand, Vietnam

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    941 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    31 A

  • Drain-source On Resistance-Max:

    0.0026 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    134 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMYS2D2N06CLTWG Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance would involve placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the device and connect it to a thermal plane or a heat sink.
  • To ensure proper biasing during startup, make sure to follow the recommended startup sequence in the datasheet. This typically involves applying the correct voltage to the gate driver before applying the voltage to the drain. Additionally, ensure that the gate driver is properly biased and that the bootstrap capacitor is fully charged before applying the drain voltage.
  • The recommended gate resistors for the NVMYS2D2N06CLTWG depend on the specific application and switching frequency. As a general guideline, a gate resistor in the range of 10-50 ohms is typically used. However, it's recommended to consult the datasheet and application notes for more specific guidance.
  • To handle ESD protection for the NVMYS2D2N06CLTWG, it's recommended to follow proper ESD handling procedures during assembly and testing. Additionally, consider adding ESD protection devices such as TVS diodes or ESD protection arrays to the PCB design. Ensure that the ESD protection devices are properly sized and placed to protect the device from ESD events.
  • The thermal derating guidelines for the NVMYS2D2N06CLTWG can be found in the datasheet. As a general guideline, the device's power rating decreases as the ambient temperature increases. It's recommended to consult the datasheet for specific thermal derating curves and to ensure that the device is operated within its recommended temperature range.

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NVMYS2D2N06CLTWG Overview

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