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NVMYS3D3N06CLTWG - onsemi

Description: Small Footprint (5x6mm); Low RDS(on); Low QG with Capacitance; LFPAK4 Package, Industry Standard; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant

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NVMYS3D3N06CLTWG - onsemi - PCB symbol
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PCB Footprints
NVMYS3D3N06CLTWG - onsemi PCB footprint - Other - Other - LFPAK4
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3D Models
NVMYS3D3N06CLTWG - onsemi - 3D model - Other - LFPAK4
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NVMYS3D3N06CLTWG Details

  • Manufacturer Part Number:

    NVMYS3D3N06CLTWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    LFPAK-4

  • Manufacturer Package Code:

    760AB

  • Country Of Origin:

    Mainland China, Malaysia, Philippines, Thailand, Vietnam

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    180 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    26 A

  • Drain-source On Resistance-Max:

    0.0042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    100 W

  • Pulsed Drain Current-Max (IDM):

    811 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMYS3D3N06CLTWG Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended. Additionally, vias should be placed under the thermal pad to connect to the copper area.
  • Ensure that the device is operated within the recommended temperature range (-40°C to 150°C). Use a heat sink or thermal interface material to reduce thermal resistance. Also, consider derating the device's power handling capability at high temperatures.
  • The NVMYS3D3N06CLTWG has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-safe environment.
  • Yes, the NVMYS3D3N06CLTWG is AEC-Q101 qualified, making it suitable for automotive applications. However, additional testing and validation may be required for specific high-reliability applications. Consult with onsemi's application engineers for guidance.
  • Check the device's gate drive circuitry, ensuring that the gate voltage is within the recommended range. Verify that the device is properly biased and that the load is within the device's power handling capability. Use an oscilloscope to monitor the device's switching waveforms and identify any anomalies.

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NVMYS3D3N06CLTWG Overview

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Part Image NTMYS3D3N06CLTWG onsemi

Power Field-Effect Transistor, 26A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET