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NVMYS3D8N04CLTWG - onsemi

Description: Power MOSFET 40 V, 3.7mΩ, 87 A, Single N-Channel

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NVMYS3D8N04CLTWG Details

  • Manufacturer Part Number:

    NVMYS3D8N04CLTWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    LFPAK-4

  • Package Description:

    LFPAK-4

  • Manufacturer Package Code:

    760AB

  • Country Of Origin:

    Mainland China, Malaysia, Philippines, Thailand, Vietnam

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2019-11-07

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    202 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    87 A

  • Drain-source On Resistance-Max:

    0.006 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    21 pF

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    55 W

  • Pulsed Drain Current-Max (IDM):

    520 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVMYS3D8N04CLTWG Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the package, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the package.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, use a suitable thermal management system, and consider derating the device's performance. Additionally, ensure that the device is properly soldered and the PCB is designed to minimize thermal resistance.
  • Exceeding the maximum junction temperature (Tj) rating can lead to reduced device lifespan, increased leakage current, and potentially even device failure. It's crucial to ensure that the device operates within the recommended temperature range to maintain reliability and performance.
  • The NVMYS3D8N04CLTWG is an industrial-grade device, but it may not meet the specific requirements for high-reliability or automotive applications. It's essential to consult with onsemi's application engineers and review the device's qualification data to determine its suitability for such applications.
  • The NVMYS3D8N04CLTWG has built-in ESD protection, but it's still important to follow proper handling and assembly procedures to prevent ESD damage. Additionally, the device is designed to prevent latch-up, but it's essential to follow the recommended operating conditions and avoid excessive voltage or current stress.

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NVMYS3D8N04CLTWG Overview

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