NVMYS4D1N06CLTWG - onsemi

NVMYS4D1N06CLTWG Details

• Manufacturer Part Number:

  NVMYS4D1N06CLTWG

• Brand Name:

  onsemi

• Pbfree Code:

  Yes

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Part Package Code:

  LFPAK-4

• Manufacturer Package Code:

  760AB

• Country Of Origin:

  Mainland China, Malaysia, Philippines, Thailand, Vietnam

• ECCN Code:

  EAR99

• Factory Lead Time:

  15 Weeks

• Date Of Intro:

  2018-12-11

• Manufacturer:

  onsemi

• YTEOL:

  6

• Avalanche Energy Rating (Eas):

  185 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  60 V

• Drain Current-Max (ID):

  22 A

• Drain-source On Resistance-Max:

  0.0057 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• JESD-30 Code:

  R-PSSO-G4

• JESD-609 Code:

  e3

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  4

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  175 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  260

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  79 W

• Pulsed Drain Current-Max (IDM):

  820 A

• Reference Standard:

  AEC-Q101

• Surface Mount:

  YES

• Terminal Finish:

  Matte Tin (Sn) - annealed

• Terminal Form:

  GULL WING

• Terminal Position:

  SINGLE

• Time@Peak Reflow Temperature-Max (s):

  30

• Transistor Element Material:

  SILICON