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NVMYS6D2N06CLTWG - onsemi

Description: Low RDS(on); Low QG and Capacitance; LFPAK4 Package, Industry Standard; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant; Small Footprint (5x6 mm)

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NVMYS6D2N06CLTWG Details

  • Manufacturer Part Number:

    NVMYS6D2N06CLTWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    LFPAK-4

  • Manufacturer Package Code:

    760AB

  • Country Of Origin:

    Mainland China, Malaysia, Philippines, Thailand, Vietnam

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Date Of Intro:

    2019-11-07

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    166 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    17 A

  • Drain-source On Resistance-Max:

    0.0088 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    61 W

  • Pulsed Drain Current-Max (IDM):

    440 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMYS6D2N06CLTWG Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing the device near a thermal pad or a heat sink, using thermal vias to dissipate heat, and keeping the surrounding area clear of other components to allow for good airflow.
  • To ensure reliable operation in high-temperature environments, follow the recommended operating temperature range, use a heat sink or thermal pad, and consider derating the device's power handling capabilities. Additionally, ensure good airflow and avoid thermal hotspots.
  • Exceeding the maximum junction temperature (Tj) rating can lead to reduced device lifespan, increased thermal resistance, and potentially catastrophic failure. It's essential to ensure the device operates within the recommended temperature range to maintain reliability and performance.
  • The NVMYS6D2N06CLTWG is an industrial-grade device, but it may not meet the specific requirements for high-reliability or automotive applications. Check the device's AEC-Q101 qualification and onsemi's automotive-grade offerings for suitable alternatives.
  • Follow proper ESD handling and assembly procedures, such as using ESD-safe workstations, wrist straps, and packaging materials. Ensure that the device is properly grounded during assembly, and consider using ESD protection devices or diodes on the PCB.

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NVMYS6D2N06CLTWG Overview

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