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NVMYS8D0N04CTWG - onsemi

Description: Small Footprint (5x6mm); Low RDS (ON); Low QG and Capacitance; LFPAK4 Package, Industry Standard; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant

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PCB Footprints
NVMYS8D0N04CTWG - onsemi PCB footprint - Other - Other - LFPAK4 4.90x4.15x1.15MM, 1.27P CASE 760AB ISSUE D_24
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3D Models
NVMYS8D0N04CTWG - onsemi  - 3D model - Other - LFPAK4 4.90x4.15x1.15MM, 1.27P CASE 760AB ISSUE D_24
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NVMYS8D0N04CTWG Details

  • Manufacturer Part Number:

    NVMYS8D0N04CTWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    LFPAK-4

  • Manufacturer Package Code:

    760AB

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    81 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    49 A

  • Drain-source On Resistance-Max:

    0.0081 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    38 W

  • Pulsed Drain Current-Max (IDM):

    255 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMYS8D0N04CTWG Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the package, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the package.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, use a suitable thermal management system, and consider derating the device's performance. Additionally, ensure that the device is properly soldered and the PCB is designed to minimize thermal resistance.
  • Exceeding the maximum junction temperature (Tj) rating can lead to reduced device lifespan, increased leakage current, and potentially even device failure. It's crucial to ensure that the device operates within the recommended temperature range to maintain reliability and performance.
  • To handle ESD protection for the NVMYS8D0N04CTWG, it's recommended to follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits in the design. Additionally, ensure that the device is properly grounded during assembly and testing.
  • When operating multiple NVMYS8D0N04CTWG devices in parallel, it's essential to ensure that each device has its own decoupling capacitor, and that the devices are properly synchronized to avoid oscillations. Additionally, consider the total current draw and ensure that the power supply can handle the combined load.

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NVMYS8D0N04CTWG Overview

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