Part Image

NVMYS9D3N06CLTWG - onsemi

Description: Small Footprint (5x6 mm); Low RDS (on); Low QG and Capacitance; LFPAK4 Package, Industry Standard; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant

Download NVMYS9D3N06CLTWG Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NVMYS9D3N06CLTWG - onsemi PCB footprint - Other - Other - LFPAK4 5x6 CASE 760AB ISSUE C_2021-1
click to zoom
3D Models
NVMYS9D3N06CLTWG - onsemi  - 3D model - Other - LFPAK4 5x6 CASE 760AB ISSUE C_2021-1
click to zoom

NVMYS9D3N06CLTWG Details

  • Manufacturer Part Number:

    NVMYS9D3N06CLTWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    LFPAK-4

  • Package Description:

    LFPAK-4

  • Manufacturer Package Code:

    760AB

  • Country Of Origin:

    Mainland China, Malaysia, Philippines, Thailand, Vietnam

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2019-11-07

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    88 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.013 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    11 pF

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    46 W

  • Pulsed Drain Current-Max (IDM):

    290 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMYS9D3N06CLTWG Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the device.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, use a suitable heat sink, and ensure good thermal conductivity between the device and the heat sink. Additionally, consider using thermal interface materials and following proper PCB design guidelines.
  • When paralleling multiple NVMYS9D3N06CLTWG devices, consider the current sharing, thermal management, and gate drive requirements. Ensure that each device has its own gate resistor and that the gate drive signals are properly synchronized. Also, make sure to follow the recommended layout and thermal design guidelines.
  • To protect the device from overvoltage and overcurrent conditions, use a suitable voltage regulator, overvoltage protection (OVP) circuit, and overcurrent protection (OCP) circuit. Additionally, consider using a fuse or a current-limiting resistor in series with the device.
  • The recommended gate drive voltage for the NVMYS9D3N06CLTWG is typically between 10V to 15V, and the recommended gate drive current is around 1A to 2A. However, the exact requirements may vary depending on the specific application and operating conditions.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NVMYS9D3N06CLTWG Overview

Use the download button to access the NVMYS9D3N06CLTWG schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like NVMYS, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NVMYS9D3N06CLTWG

Showing 0 results