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NVNJWS0K9N10MCLTAG - onsemi

Description: This is a Pb-Free Device; Low RDS (on); AEC-Q101 Qualified and PPAP Capable; ESD Protected Gate

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NVNJWS0K9N10MCLTAG - onsemi PCB footprint - Other - Other - NVNJWS0K9N10MCLTAG-2
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NVNJWS0K9N10MCLTAG - onsemi  - 3D model - Other - NVNJWS0K9N10MCLTAG-2
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NVNJWS0K9N10MCLTAG Details

  • Manufacturer Part Number:

    NVNJWS0K9N10MCLTAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    XDFNW3 1.00x1.00x0.38 0.65P

  • Manufacturer Package Code:

    521AC

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Additional Feature:

    ESD PROTECTED

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    1.33 A

  • Drain-source On Resistance-Max:

    1.17 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.3 pF

  • JESD-30 Code:

    S-PDSO-F3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    4.66 W

  • Pulsed Drain Current-Max (IDM):

    10.18 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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NVNJWS0K9N10MCLTAG Overview

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