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NVNJWS200N031LTAG - onsemi

Description: Low RDS (on); AEC-Q101 Qualified and PPAP Capable; Wettable Flank; ESD Protected Gate; This is a Pb-Free Device

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NVNJWS200N031LTAG - onsemi PCB footprint - Other - Other - NVNJWS200N031LTAG
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NVNJWS200N031LTAG - onsemi  - 3D model - Other - NVNJWS200N031LTAG
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NVNJWS200N031LTAG Details

  • Manufacturer Part Number:

    NVNJWS200N031LTAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    XDFNW3 1.00x1.00x0.38 0.65P

  • Package Description:

    XDFNW3, 3 PIN

  • Manufacturer Package Code:

    521AC

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    2.2 A

  • Drain-source On Resistance-Max:

    0.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    8.3 pF

  • JESD-30 Code:

    R-PDSO-N3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    4.1 W

  • Pulsed Drain Current-Max (IDM):

    25 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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NVNJWS200N031LTAG Overview

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