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NVTFS014P04M8LTAG - onsemi

Description: Small Footprint (3x3 mm); Low RDS on ; Low Capacitance; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS Compliant

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NVTFS014P04M8LTAG Details

  • Manufacturer Part Number:

    NVTFS014P04M8LTAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFN-8 / u8FL

  • Package Description:

    WDFN-8

  • Manufacturer Package Code:

    511AB

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Date Of Intro:

    2019-12-04

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    143 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    49 A

  • Drain-source On Resistance-Max:

    0.0138 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    32 pF

  • JESD-30 Code:

    S-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    61 W

  • Pulsed Drain Current-Max (IDM):

    224 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVTFS014P04M8LTAG Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The SOA is typically defined by the device's voltage, current, and power ratings. For NVTFS014P04M8LTAG, the SOA is limited by the maximum voltage (40V), current (14A), and power (140W) ratings.
  • Use ESD-sensitive handling procedures, such as grounding straps and ESD-safe workbenches. Ensure that the device is stored in an ESD-safe package and handled with ESD-safe tools.
  • Use a soldering iron with a temperature range of 250°C to 260°C, and a soldering time of 3-5 seconds. Ensure that the device is not exposed to temperatures above 260°C.

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NVTFS014P04M8LTAG Overview

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