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NVTFS027N10MCLTAG - onsemi

Description: Small Footprint (3x3 mm); Low RDS(on); Low QG and Capacitance; Wettable Flank Option available; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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PCB Footprints
NVTFS027N10MCLTAG - onsemi PCB footprint - Other - Other - WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D_2022-2
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3D Models
NVTFS027N10MCLTAG - onsemi  - 3D model - Other - WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D_2022-2
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NVTFS027N10MCLTAG Details

  • Manufacturer Part Number:

    NVTFS027N10MCLTAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFN-8 / u8FL

  • Package Description:

    WDFN-8

  • Manufacturer Package Code:

    511AB

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    414 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    28 A

  • Drain-source On Resistance-Max:

    0.026 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    4 pF

  • JESD-30 Code:

    S-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    46 W

  • Pulsed Drain Current-Max (IDM):

    119 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVTFS027N10MCLTAG Frequently Asked Questions (FAQs)

  • A 2-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
  • The device requires a stable voltage supply and a proper biasing circuit to ensure optimal performance. A voltage regulator and a bias resistor network can be used to achieve this.
  • A drive strength of 2-4A is recommended for the gate driver to ensure fast switching times and minimal power loss.
  • A TVS diode and a fuse can be used to protect the device from overvoltage and overcurrent. Additionally, a current sense resistor and a comparator can be used to detect overcurrent conditions.
  • A heat sink with a thermal interface material (TIM) is recommended for high-power applications. The heat sink should be designed to provide adequate airflow and heat dissipation.

Trust Checks

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NVTFS027N10MCLTAG Overview

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