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NVTFS070N10MCLTAG - onsemi

Description: Small Footprint (3x3 mm); Low RDS(on); Low QG and Capacitance; Wettable Flank Option available; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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PCB Footprints
NVTFS070N10MCLTAG - onsemi PCB footprint - Other - Other - WDFNW8 3.3x3.3, 0.65P (Full−Cut 8FL WF) CASE 515AN ISSUE O_24
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3D Models
NVTFS070N10MCLTAG - onsemi  - 3D model - Other - WDFNW8 3.3x3.3, 0.65P (Full−Cut 8FL WF) CASE 515AN ISSUE O_24
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NVTFS070N10MCLTAG Details

  • Manufacturer Part Number:

    NVTFS070N10MCLTAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFN-8 / u8FL

  • Package Description:

    WDFN-8

  • Manufacturer Package Code:

    511AB

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.75

  • Avalanche Energy Rating (Eas):

    423 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    4.5 A

  • Drain-source On Resistance-Max:

    0.065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1.9 pF

  • JESD-30 Code:

    S-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    25 W

  • Pulsed Drain Current-Max (IDM):

    47 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVTFS070N10MCLTAG Frequently Asked Questions (FAQs)

  • The recommended PCB layout and thermal management for the NVTFS070N10MCLTAG involve using a multi-layer board with a solid ground plane, placing the device near the center of the board, and using thermal vias to dissipate heat. A heat sink or thermal pad can also be used to improve thermal performance.
  • To ensure reliable operation and minimize the risk of thermal runaway, it's essential to follow the recommended operating conditions, use a suitable heat sink, and implement over-temperature protection and current limiting in the system design.
  • Operating the NVTFS070N10MCLTAG at high temperatures can reduce its reliability and lifespan. High temperatures can cause increased thermal stress, which can lead to degradation of the device's electrical characteristics and potentially cause failures. It's essential to operate the device within the recommended temperature range to ensure optimal performance and reliability.
  • To select the correct gate driver and layout, consider the device's gate charge, switching frequency, and voltage rating. A suitable gate driver should be able to provide the required gate current and voltage, and the layout should be designed to minimize parasitic inductance and capacitance. It's also essential to follow the recommended layout guidelines and use a low-impedance path for the gate drive signal.
  • To minimize electromagnetic interference, it's essential to follow good PCB design practices, such as using a solid ground plane, minimizing loop areas, and using shielding and filtering components. Additionally, consider using a spread-spectrum clock or frequency hopping to reduce EMI, and ensure that the device is operated within the recommended frequency range.

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NVTFS070N10MCLTAG Overview

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