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NVTFS4C25NTAG - onsemi

Description: Low Capacitance; AEC−Q101 Qualified and PPAP Capable; NVTFS4C25NWF − Wettable Flanks Product; Low RDS(on); Optimized Gate Charge; RoHS Compliant

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PCB Footprints
NVTFS4C25NTAG - onsemi PCB footprint - Other - Other - WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D_2
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3D Models
NVTFS4C25NTAG - onsemi  - 3D model - Other - WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D_2
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NVTFS4C25NTAG Details

  • Manufacturer Part Number:

    NVTFS4C25NTAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    WDFN8 3.3x3.3, 0.65P

  • Package Description:

    WDFN-8

  • Pin Count:

    8

  • Manufacturer Package Code:

    511AB

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    11.2 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    10.1 A

  • Drain-source On Resistance-Max:

    0.017 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    85 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    14.3 W

  • Pulsed Drain Current-Max (IDM):

    90 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVTFS4C25NTAG Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for NVTFS4C25NTAG is 1.7V to 5.5V.
  • Anti-collision in NVTFS4C25NTAG can be implemented using the SL3 protocol, which is a proprietary protocol developed by onsemi. The SL3 protocol uses a combination of frequency hopping and adaptive frequency hopping to minimize interference and collisions.
  • The maximum data transfer rate of NVTFS4C25NTAG is 106 kbps.
  • The NVTFS4C25NTAG can be configured for different operating modes using the One-Time Programmable (OTP) memory. The OTP memory allows the user to configure the device for different operating modes, such as passive or active mode, and to set the device's operating frequency.
  • The typical current consumption of NVTFS4C25NTAG is 10mA in active mode and 10uA in passive mode.

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NVTFS4C25NTAG Overview

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