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NVTFS5826NLWFTWG-UM - onsemi

Description: Low on resistance; High current capability; 100% avalanche tested; AEC-Q101 Qualified; Solenoid driver

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NVTFS5826NLWFTWG-UM - onsemi PCB footprint - Other - Other - WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D_2022-2
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NVTFS5826NLWFTWG-UM - onsemi  - 3D model - Other - WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D_2022-2
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NVTFS5826NLWFTWG-UM Details

  • Manufacturer Part Number:

    NVTFS5826NLWFTWG-UM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFNW8 3.3x3.3, 0.65P (Full−Cut ?8FL WF)

  • Package Description:

    WDFN-8

  • Manufacturer Package Code:

    515AN

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.032 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    50 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    22 W

  • Pulsed Drain Current-Max (IDM):

    127 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVTFS5826NLWFTWG-UM Frequently Asked Questions (FAQs)

  • The recommended PCB layout and thermal management for the NVTFS5826NLWFTWG-UM can be found in the onsemi application note AND9093/D, which provides guidelines for PCB design, thermal management, and layout considerations to ensure optimal performance and reliability.
  • The selection of input and output capacitors depends on the specific application and operating conditions. onsemi recommends using X5R or X7R ceramic capacitors with a voltage rating of at least 2x the maximum input voltage. The capacitance value should be chosen based on the desired ripple voltage and transient response. A good starting point is to use 10uF to 22uF capacitors for both input and output.
  • The maximum allowed voltage deviation on the input pins of the NVTFS5826NLWFTWG-UM is ±10% of the nominal input voltage. Exceeding this limit may affect the device's performance, reliability, or even cause damage.
  • To ensure EMC with the NVTFS5826NLWFTWG-UM, follow the guidelines in the onsemi application note AND9093/D, which provides recommendations for PCB layout, component selection, and shielding to minimize electromagnetic interference (EMI) and ensure compliance with relevant EMC standards.
  • The recommended operating temperature range for the NVTFS5826NLWFTWG-UM is -40°C to +125°C. Operating the device outside this range may affect its performance, reliability, or even cause damage.

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NVTFS5826NLWFTWG-UM Overview

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