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NVTFS5C478NLWFTAG - onsemi

Description: Small Footprint (3x3 mm); Low On-Resistance; Low Capacitance; NVTFS5C478NLWF − Wettable Flanks Product; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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PCB Footprints
NVTFS5C478NLWFTAG - onsemi PCB footprint - Other - Other - WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D_1
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NVTFS5C478NLWFTAG - onsemi  - 3D model - Other - WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D_1
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NVTFS5C478NLWFTAG Details

  • Manufacturer Part Number:

    NVTFS5C478NLWFTAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFNW8 3.3x3.3, 0.65P (Full−Cut ?8FL WF)

  • Package Description:

    WDFN-8

  • Manufacturer Package Code:

    515AN

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    43 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.025 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    8 pF

  • JESD-30 Code:

    S-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    20 W

  • Pulsed Drain Current-Max (IDM):

    104 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVTFS5C478NLWFTAG Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended voltage and current ratings, and that the PCB is designed to minimize thermal resistance. Also, consider using a thermal interface material (TIM) to improve heat transfer between the device and heat sink.
  • The critical timing parameters include the input rise and fall times, output delay, and propagation delay. These parameters are critical for ensuring reliable operation and should be carefully considered during design and layout.
  • The NVTFS5C478NLWFTAG has built-in ESD protection, but additional protection measures may be necessary depending on the application. Consider using external ESD protection devices or implementing ESD protection circuits in the PCB design.
  • The recommended decoupling capacitor values are 0.1uF to 1uF, and they should be placed as close as possible to the device pins. The capacitors should be rated for the operating voltage and should have a low equivalent series resistance (ESR).

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NVTFS5C478NLWFTAG Overview

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