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NVTFS5C658NLTAG - onsemi

Description: Small Footprint (3x3 mm); Low On-Resistance; Low Capacitance; NVTFS5C658NLWF − Wettable Flanks Product; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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Symbol
NVTFS5C658NLTAG - onsemi - PCB symbol
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PCB Footprints
NVTFS5C658NLTAG - onsemi PCB footprint - Other - Other - WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D_2
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3D Models
NVTFS5C658NLTAG - onsemi - 3D model - Other - WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D_2
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NVTFS5C658NLTAG Details

  • Manufacturer Part Number:

    NVTFS5C658NLTAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFN-8 / u8FL

  • Package Description:

    WDFN-8

  • Manufacturer Package Code:

    511AB

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2017-01-06

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    142 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.073 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    440 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVTFS5C658NLTAG Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended voltage and current ranges, and that the PCB is designed to minimize thermal resistance. Also, consider using a thermal interface material (TIM) to improve heat transfer between the device and heat sink.
  • Exceeding the maximum Tj rating can lead to reduced device lifespan, increased thermal resistance, and potentially catastrophic failure. Ensure that the device is operated within the recommended temperature range to maintain reliability.
  • Use ESD protection devices such as TVS diodes or ESD arrays on the input and output pins to protect against electrostatic discharge. Follow proper PCB design and layout guidelines to minimize ESD susceptibility.
  • Use a soldering temperature of 260°C (500°F) for a maximum of 10 seconds. Ensure that the soldering iron is set to a low temperature and the soldering time is minimized to prevent damage to the device.

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NVTFS5C658NLTAG Overview

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