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NVTFS5C673NLWFTAG - onsemi

Description: Low On-Resistance; Small Footprint (3x3 mm); Low Capacitance; NVTFS5C673NLWF − Wettable Flanks Product; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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Symbol
NVTFS5C673NLWFTAG - onsemi - PCB symbol
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PCB Footprints
NVTFS5C673NLWFTAG - onsemi PCB footprint - Other - Other - WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D_1
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3D Models
NVTFS5C673NLWFTAG - onsemi - 3D model - Other - WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D_1
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NVTFS5C673NLWFTAG Details

  • Manufacturer Part Number:

    NVTFS5C673NLWFTAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFNW8 3.3x3.3, 0.65P (Full−Cut ?8FL WF)

  • Package Description:

    WDFN-8, 5 PIN

  • Manufacturer Package Code:

    515AN

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    88 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.015 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    290 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVTFS5C673NLWFTAG Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended voltage and current ratings, and that the PCB is designed to minimize thermal resistance. Also, consider using a thermal interface material (TIM) to improve heat transfer between the device and heat sink.
  • The critical timing parameters include the rise and fall times, propagation delay, and pulse width distortion. These parameters are critical for ensuring reliable data transmission and reception.
  • Use ESD protection devices such as TVS diodes or ESD arrays on the input and output pins to protect the device from electrostatic discharge. Also, ensure that the PCB is designed with ESD protection in mind, including the use of ESD-safe materials and handling procedures.
  • The recommended termination schemes include series termination, parallel termination, and Thevenin termination. The choice of termination scheme depends on the specific application requirements and PCB layout constraints.

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NVTFS5C673NLWFTAG Overview

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