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NVTFS6H854NTAG - onsemi

Description: Small Footprint (3.3 x 3.3 mm); Low RDS (ON); Low QG and Capacitance; Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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Symbol
NVTFS6H854NTAG - onsemi - PCB symbol
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PCB Footprints
NVTFS6H854NTAG - onsemi PCB footprint - Other - Other - WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D_2
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3D Models
NVTFS6H854NTAG - onsemi - 3D model - Other - WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D_2
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NVTFS6H854NTAG Details

  • Manufacturer Part Number:

    NVTFS6H854NTAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFN-8 / u8FL

  • Package Description:

    WDFN-8

  • Manufacturer Package Code:

    511AB

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Date Of Intro:

    2018-06-29

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    205 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    9.5 A

  • Drain-source On Resistance-Max:

    0.0145 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5.4 pF

  • JESD-30 Code:

    S-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    68 W

  • Pulsed Drain Current-Max (IDM):

    175 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVTFS6H854NTAG Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the device is recommended for optimal thermal performance. The thermal pad should be connected to a large copper area to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C. Use a heat sink or thermal interface material to reduce thermal resistance. Also, consider derating the device's power handling capability at high temperatures.
  • The NVTFS6H854NTAG has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures when handling the device. Use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-safe environment.
  • Yes, the NVTFS6H854NTAG is qualified for automotive and high-reliability applications. However, additional testing and validation may be required to meet specific industry standards or customer requirements.
  • Use thermal imaging or thermocouple measurements to identify hotspots. Check for proper PCB layout, thermal interface material, and heat sink design. Verify that the device is operated within the recommended power handling capability and junction temperature range.

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NVTFS6H854NTAG Overview

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