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NVTFS6H860NLTAG - onsemi

Description: Small Footprint (5x6mm); Low RDS (on); Low QG and Capacitance; NVTFS6H860NLWF -Wettable Flank Option; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant

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PCB Footprints
NVTFS6H860NLTAG - onsemi PCB footprint - Other - Other - WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUED
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3D Models
NVTFS6H860NLTAG - onsemi  - 3D model - Other - WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUED
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NVTFS6H860NLTAG Details

  • Manufacturer Part Number:

    NVTFS6H860NLTAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFN-8 / u8FL

  • Package Description:

    WDFN-8

  • Manufacturer Package Code:

    511AB

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    121 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    8.1 A

  • Drain-source On Resistance-Max:

    0.026 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JESD-30 Code:

    S-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    122 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVTFS6H860NLTAG Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The device should be placed near a thermal pad or a heat sink to ensure good heat dissipation.
  • Ensure that the device is operated within the recommended temperature range (TJ = -40°C to 150°C). Use a heat sink or thermal pad to maintain a low junction temperature. Avoid overheating, which can cause permanent damage.
  • Monitor the drain-source voltage (VDS), gate-source voltage (VGS), and junction temperature (TJ) to ensure safe operation. Exceeding the maximum ratings can cause permanent damage.
  • Handle the device by the body or use an ESD wrist strap or mat to prevent static electricity buildup. Use ESD-protected packaging and storage materials. Avoid touching the device pins or leads.
  • A gate driver with a high current capability (e.g., 1A) and a low output impedance is recommended. Use a gate resistor (e.g., 10Ω) to limit the gate current and prevent oscillations.

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NVTFS6H860NLTAG Overview

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