Part Image

NVTFS6H888NLTAG - onsemi

Description: Small Footprint (3.3 x 3.3 mm); Low RDS (ON); Low QG and Capacitance; Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

Download NVTFS6H888NLTAG Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NVTFS6H888NLTAG - onsemi PCB footprint - Other - Other - NVTFS6H888NLTAG-2
click to zoom
3D Models
NVTFS6H888NLTAG - onsemi  - 3D model - Other - NVTFS6H888NLTAG-2
click to zoom

NVTFS6H888NLTAG Details

  • Manufacturer Part Number:

    NVTFS6H888NLTAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFN-8 / u8FL

  • Package Description:

    WDFN-8

  • Manufacturer Package Code:

    511AB

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Date Of Intro:

    2020-01-07

  • Manufacturer:

    onsemi

  • YTEOL:

    5.75

  • Avalanche Energy Rating (Eas):

    92 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    4.9 A

  • Drain-source On Resistance-Max:

    0.067 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3 pF

  • JESD-30 Code:

    S-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    23 W

  • Pulsed Drain Current-Max (IDM):

    49 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVTFS6H888NLTAG Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper thermal design, use a heat sink if necessary, and follow the recommended operating conditions. Also, consider using a thermal interface material to improve heat transfer.
  • Exceeding the maximum junction temperature can lead to reduced lifespan, decreased performance, and potentially catastrophic failure. It's essential to ensure the device operates within the recommended temperature range.
  • Yes, the NVTFS6H888NLTAG is AEC-Q101 qualified, making it suitable for automotive and high-reliability applications. However, ensure you follow the recommended operating conditions and design guidelines.
  • Follow standard ESD handling procedures, such as using an ESD wrist strap, ESD mat, and ESD-safe packaging. Ensure that the device is properly grounded during assembly and handling.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NVTFS6H888NLTAG Overview

Use the download button to access the NVTFS6H888NLTAG schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like NVTFS, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NVTFS6H888NLTAG

Showing 0 results