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NVTFS9D6P04M8LTAG - onsemi

Description: Low RDS(on); NVTFWS9D6P04M8L − Wettable Flanks Product; Low Capacitance; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS Compliant; Small Footprint (3.3 x 3.3mm)

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NVTFS9D6P04M8LTAG - onsemi PCB footprint - Other - Other - NVTFS5124PLTWG-3
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NVTFS9D6P04M8LTAG - onsemi  - 3D model - Other - NVTFS5124PLTWG-3
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NVTFS9D6P04M8LTAG Details

  • Manufacturer Part Number:

    NVTFS9D6P04M8LTAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFN-8 / u8FL

  • Package Description:

    WDFN-8

  • Manufacturer Package Code:

    511AB

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    220 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    64 A

  • Drain-source On Resistance-Max:

    0.0095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    31 pF

  • JESD-30 Code:

    S-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    75 W

  • Pulsed Drain Current-Max (IDM):

    311 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVTFS9D6P04M8LTAG Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended voltage and current ranges, and that the PCB is designed to minimize thermal resistance. Also, consider using a thermal interface material to improve heat transfer.
  • Exceeding the maximum junction temperature can lead to reduced device lifespan, increased thermal resistance, and potentially catastrophic failure. Ensure that the device is operated within the recommended temperature range to prevent premature failure.
  • Use ESD protection devices such as TVS diodes or ESD arrays on the input and output pins to prevent damage from electrostatic discharge. Follow proper handling and storage procedures to prevent ESD damage.
  • Use a soldering temperature of 260°C (500°F) for a maximum of 10 seconds. Ensure that the device is not exposed to temperatures above 260°C (500°F) for an extended period.

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Manufacturer Collaborated
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NVTFS9D6P04M8LTAG Overview

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