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NVTFWS9D6P04M8LTAG - onsemi

Description: Low RDS(on); NVTFWS9D6P04M8L − Wettable Flanks Product; Low Capacitance; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS Compliant; Small Footprint (3.3 x 3.3mm)

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NVTFWS9D6P04M8LTAG - onsemi PCB footprint - Other - Other - NVTFWS9D6P04M8LTAG-1
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NVTFWS9D6P04M8LTAG Details

  • Manufacturer Part Number:

    NVTFWS9D6P04M8LTAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFNW8 3.3x3.3, 0.65P (Full−Cut ?8FL WF)

  • Package Description:

    WDFN-8

  • Manufacturer Package Code:

    515AN

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    220 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    64 A

  • Drain-source On Resistance-Max:

    0.0095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    31 pF

  • JESD-30 Code:

    S-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    75 W

  • Pulsed Drain Current-Max (IDM):

    311 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVTFWS9D6P04M8LTAG Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2oz copper thickness and a thermal relief pattern are suggested. Refer to the onsemi application note AND9173/D for more details.
  • The device requires a power-on reset (POR) circuit to ensure proper startup. A 10kΩ resistor and a 10nF capacitor can be used to create a POR circuit. Additionally, the EN pin should be tied to VIN through a 10kΩ resistor to ensure proper configuration.
  • A 10uF to 22uF X5R or X7R ceramic capacitor is recommended for the VIN pin to filter out noise and ensure stable operation.
  • The thermal shutdown feature is enabled by default. If the junction temperature exceeds 150°C, the device will shut down. To handle this, ensure proper thermal design, and consider adding a thermal monitoring circuit to detect and respond to thermal shutdown events.
  • A 10uF to 22uF X5R or X7R ceramic capacitor is recommended for the VOUT pin to filter out noise and ensure stable output voltage.

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NVTFWS9D6P04M8LTAG Overview

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