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NXH003P120M3F2PTNG - onsemi

Description: 15V to 18V Gate Drive; 3 mohm / 1200V M3S SiC MOSFET Half-Bridge; Pb-Free, Halide Free and are RoHS Compliant

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NXH003P120M3F2PTNG Details

  • Manufacturer Part Number:

    NXH003P120M3F2PTNG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PIM36 56.70x42.50x12.00

  • Manufacturer Package Code:

    180BY

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.65

  • Case Connection:

    ISOLATED

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    435 A

  • Drain-source On Resistance-Max:

    0.005 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    90 pF

  • JESD-30 Code:

    R-XUFM-X36

  • Number of Elements:

    2

  • Number of Terminals:

    36

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1482 W

  • Pulsed Drain Current-Max (IDM):

    870 A

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

NXH003P120M3F2PTNG Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a minimum of 2 oz copper thickness, a thermal relief pattern under the device, and a solid copper pour on the top and bottom layers. Additionally, it's recommended to use vias to connect the thermal pad to the bottom layer to improve heat dissipation.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including the maximum junction temperature (Tj) of 150°C. Proper thermal design, including a heat sink and thermal interface material, is also crucial. Furthermore, consider derating the device's power handling capabilities at higher temperatures.
  • The NXH003P120M3F2PTNG has built-in ESD protection, but it's still essential to follow proper handling and storage precautions to prevent damage. This includes using an ESD wrist strap or mat, storing the devices in anti-static packaging, and avoiding touching the pins or leads.
  • Yes, the NXH003P120M3F2PTNG is suitable for high-reliability and automotive applications. It's AEC-Q101 qualified and meets the requirements for automotive-grade reliability. However, it's essential to follow the recommended operating conditions, and consider additional testing and validation for specific application requirements.
  • To troubleshoot and debug issues with the NXH003P120M3F2PTNG, start by reviewing the datasheet and application notes. Check for proper PCB layout, thermal design, and component selection. Use oscilloscopes and other diagnostic tools to identify voltage and current anomalies. Consult onsemi's technical support resources and application notes for guidance on specific issues.

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NXH003P120M3F2PTNG Overview

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