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NXH006P120MNF2PTG - onsemi

Description: Robust M1 planar SiC MOSFET technology; 18V to 20V gate drive

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NXH006P120MNF2PTG - onsemi - PCB symbol
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PCB Footprints
NXH006P120MNF2PTG - onsemi PCB footprint - Other - Other - PIM36 56.7x42.5 (PRESS FIT)
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3D Models
NXH006P120MNF2PTG - onsemi - 3D model - Other - PIM36 56.7x42.5 (PRESS FIT)
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NXH006P120MNF2PTG Details

  • Manufacturer Part Number:

    NXH006P120MNF2PTG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PIM36 56.70x42.50x12.00

  • Package Description:

    MODULE-36

  • Manufacturer Package Code:

    180BY

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.65

  • Case Connection:

    ISOLATED

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    304 A

  • Drain-source On Resistance-Max:

    0.0072 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    49 pF

  • JESD-30 Code:

    R-XUFM-X36

  • Number of Elements:

    2

  • Number of Terminals:

    36

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    950 W

  • Pulsed Drain Current-Max (IDM):

    912 A

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

NXH006P120MNF2PTG Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the NXH006P120MNF2PTG is a 5x6mm pad with a 0.5mm thermal pad in the center, and a 1.5mm keep-out zone around the device.
  • To ensure reliable operation in high-temperature environments, it is recommended to follow proper thermal design and layout guidelines, including providing adequate heat sinking and thermal management, and ensuring that the device is operated within its specified temperature range.
  • The maximum allowed voltage transient for the NXH006P120MNF2PTG is 150% of the maximum rated voltage, but not exceeding 120% of the absolute maximum voltage rating, for a duration of less than 100ms.
  • Yes, the NXH006P120MNF2PTG can be used in parallel to increase current handling, but it is recommended to follow proper design and layout guidelines to ensure equal current sharing and to minimize thermal and electrical stresses.
  • The recommended gate drive voltage for the NXH006P120MNF2PTG is between 10V and 15V, with a maximum gate drive voltage of 20V.

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NXH006P120MNF2PTG Overview

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