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NXH011F120M3F2PTHG - onsemi

Description: Silicon Carbide (SiC) Module – EliteSiC, 11 mohm, 1200 V, SiC M3S MOSFET, Full Bridge, F2 Package

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NXH011F120M3F2PTHG Details

  • Manufacturer Part Number:

    NXH011F120M3F2PTHG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PIM34 56.70x42.50x12.00

  • Package Description:

    MODULE-34

  • Manufacturer Package Code:

    180HU

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • Case Connection:

    ISOLATED

  • Configuration:

    COMPLEX

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    105 A

  • Drain-source On Resistance-Max:

    0.016 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    33.1 pF

  • JESD-30 Code:

    R-XUFM-X34

  • Number of Elements:

    4

  • Number of Terminals:

    34

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    244 W

  • Pulsed Drain Current-Max (IDM):

    316 A

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

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NXH011F120M3F2PTHG Overview

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