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NXH400N100H4Q2F2SG - onsemi

Description: Module with low thermal impedance baseplate; Solder and press-fit options; 1000V low VCE(sat) IGBTs and 1200V SiC diode optimized combination for DC-AC conversion

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NXH400N100H4Q2F2SG Details

  • Manufacturer Part Number:

    NXH400N100H4Q2F2SG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    Q2

  • Manufacturer Package Code:

    180BS

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Date Of Intro:

    2020-11-16

  • Manufacturer:

    onsemi

  • YTEOL:

    5.35

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    409 A

  • Collector-Emitter Voltage-Max:

    1000 V

  • Configuration:

    COMPLEX

  • Gate-Emitter Thr Voltage-Max:

    6.1 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X42

  • Number of Elements:

    4

  • Number of Terminals:

    42

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Packing Method:

    TRAY

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    959 W

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    619 ns

  • Turn-on Time-Nom (ton):

    186 ns

  • VCEsat-Max:

    2.3 V

NXH400N100H4Q2F2SG Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NXH400N100H4Q2F2SG is -55°C to 150°C, as specified in the datasheet.
  • To ensure safe operating area (SOA), follow the guidelines in the datasheet, including limiting the drain-source voltage (Vds) and drain current (Id) to the specified maximum values, and ensuring the device is operated within the recommended temperature range.
  • The recommended gate drive voltage for the NXH400N100H4Q2F2SG is between 10V and 15V, as specified in the datasheet. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
  • Proper thermal management is crucial for the NXH400N100H4Q2F2SG. Ensure good heat dissipation by using a suitable heat sink, applying thermal interface material (TIM), and maintaining a low thermal resistance between the device and the heat sink.
  • The NXH400N100H4Q2F2SG has built-in ESD protection, but it's still important to follow proper handling and assembly procedures to prevent ESD damage. Use ESD-safe equipment, wear ESD-protective clothing, and ensure the device is properly grounded during handling and assembly.

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NXH400N100H4Q2F2SG Overview

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