Part Image

NXV08H350XT1 - onsemi

Description: 2 Phase MOSFET Module At Customer Side this Module Can Be Used as 1/2 Bridge MOSFET Module by Combining 2 Phase Out Power Terminals; Electrically Isolated DBC Substrate for Low Rthjc; Compact Design for Low Total Module Resistance; Module Serialization for Full Traceability; Module Level AQG324 Qualified. Components Inside are AEC Q101 (MOSFET) & AEC Q200 (Passives) Qualified; UL 94 V−0 Compliant; This Device is Pb−Free and is RoHS Compliant

Download NXV08H350XT1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NXV08H350XT1 - onsemi PCB footprint - Other - Other - APM17−MDC
click to zoom
3D Models
NXV08H350XT1 - onsemi  - 3D model - Other - APM17−MDC
click to zoom

NXV08H350XT1 Details

  • Manufacturer Part Number:

    NXV08H350XT1

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    APM17−MDC

  • Manufacturer Package Code:

    MODHH

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    1946 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    COMPLEX

  • DS Breakdown Voltage-Min:

    80 V

  • Drain-source On Resistance-Max:

    0.001039 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    53 pF

  • JESD-30 Code:

    R-PDIP-T17

  • JESD-609 Code:

    e3

  • Number of Elements:

    4

  • Number of Terminals:

    17

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NXV08H350XT1 Overview

Use the download button to access the NXV08H350XT1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like NXV08, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NXV08H350XT1

Showing 0 results