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NXV65HR51DZ2 - onsemi

Description: Automotive Qualified per AEC Q101 and AQG324 Guidelines; SIP or DIP H−Bridge Power Module for On−board Charger (OBC) in EV−PHEV; Compact Design for Low Total Module Resistance; Module Serialization for Full Traceability; Lead Free, RoHS and UL94V−0 Compliant

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PCB Footprints
NXV65HR51DZ2 - onsemi PCB footprint - Other - Other - APMCA−B16 / 16LD, AUTOMOTIVE MODULE CASE MODGJ ISSUE A
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3D Models
NXV65HR51DZ2 - onsemi  - 3D model - Other - APMCA−B16 / 16LD, AUTOMOTIVE MODULE CASE MODGJ ISSUE A
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NXV65HR51DZ2 Details

  • Manufacturer Part Number:

    NXV65HR51DZ2

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PIM16 40.10x21.90x4.50

  • Manufacturer Package Code:

    MODGJ

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    623 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    COMPLEX

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    33 A

  • Drain-source On Resistance-Max:

    0.051 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    16 pF

  • JESD-30 Code:

    R-XSIP-T16

  • JESD-609 Code:

    e3

  • Number of Elements:

    4

  • Number of Terminals:

    16

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    135 W

  • Reference Standard:

    AEC-Q101; IEC-60664-1; IEC-60950-1

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NXV65HR51DZ2 Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. A 4-layer PCB with a dedicated thermal layer is recommended.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, use a suitable thermal interface material, and implement a robust cooling system. Additionally, consider derating the device's power dissipation and voltage ratings according to the temperature.
  • The NXV65HR51DZ2 has built-in ESD protection, but it's still crucial to follow proper handling and storage precautions to prevent damage. Use an ESD wrist strap, mat, or workstation, and avoid touching the device's pins or exposed die. Store the device in an anti-static bag or container.
  • Yes, the NXV65HR51DZ2 is suitable for high-reliability and automotive applications. However, it's essential to follow the recommended operating conditions, and ensure that the device is properly qualified and validated for the specific application. Consult with onsemi's application notes and reliability reports for more information.
  • The recommended soldering conditions for the NXV65HR51DZ2 include a peak temperature of 260°C, a soldering time of 10 seconds, and a soldering method that follows the IPC J-STD-020 standard. For rework, use a low-temperature soldering iron and follow onsemi's recommended rework procedures.

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NXV65HR51DZ2 Overview

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